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AS1163 数据表(PDF) 21 Page - ams-OSRAM AG |
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AS1163 数据表(HTML) 21 Page - ams-OSRAM AG |
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21 / 91 page ![]() AS1163 Functional description Datasheet • PUBLIC • Document Feedback DS001075 • v2-00 • 2025-Nov-21 21 / 91 / 6.2.1 OTP burn procedure OTP required voltage@25°C: 2.7V ± 100mV, additionally a 10µF bypass capacitor is required on VDD. To program the OTP customer section (from address 0x0D to 0x1F), the following steps must be followed, once the device is accessible via a dedicated command: 1. Reset/init 2. Settestpw 3. Setotp 4. Cust 5. Burn 6. Lower voltage (within 15µs) 7. Wait 5ms 8. Raise voltage 9. Idle 10. settestpw(0) Based on qualification data of the pfuse OTP element, a burning yield loss of typically around 3ppm/bit has to be considered while using the specified optimum burn conditions. Furthermore any burning yield loss higher than 50ppm/bit is an indicator that for some reasons the burning conditions are not in the optimum qualified range. To verify the correctness of burned values: 1. Write different data to OTP (e.g. all OTP bytes at 0x1A1A) 2. Send CUST command 3. Send GLOAD command (optional, only for GLOAD check) 4. Send LOAD command 5. Send IDLE command 6. Read back all OTP and verify the burned values 7. Once the bit 1F.7 (Cust_lock) is 1, the OTP can no longer be changed |
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