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ST10R172LT6 数据表(PDF) 42 Page - STMicroelectronics |
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ST10R172LT6 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 68 page ![]() 42/68 ST10R172L - ELECTRICAL CHARACTERISTICS 15.3.2 Memory Cycle Variables The timing tables below use three variables derived from the BUSCONx registers and represent programmed memory cycle characteristics. Table 13 describes how these variables are computed. Description Symbol Values ALE Extension tA TCL * <ALECTL> Memory Cycle Time Waitstates tC 2TCL * (15 - <MCTC>) Memory Tristate Time tF 2TCL * (1 - <MTTC>) Table 13 Memory cycle variables 1 |
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