STR730FZ1T7 datasheet(36/52 Pages) STMICROELECTRONICS

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Electrical parameters

STR73xFxx

36/52

Electromagnetic interference (EMI)

Based on a simple application running on the product (toggling 2 LEDs through the I/O

ports), the product is monitored in terms of emission. This emission test is in line with the

norm SAE J 1752/3 which specifies the board and the loading of each pin.

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU and DLU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models

can be simulated: human body model and machine model. This test conforms to the

JESD22-A114A/A115A standard.

Notes:

Data based on characterization results, not tested in production.

Static and dynamic latch-up

●

LU: 3 complementary static tests are required on 10 parts to assess the latch-up

performance. A supply overvoltage (applied to each power supply pin) and a current

injection (applied to each input, output and configurable I/O pin) are performed on each

Table 20.

EMI data

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

[fOSC4M/fMCLK]

Unit

6/36 MHz

8/8 MHz

SEMI

Peak level

VDD=5.0V,

TA=+25°C,

All packages

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

SAE EMI Level

3.5

Table 21.

ESD Absolute Maximum ratings

Symbol

Ratings

Conditions

Maximum

value 1)

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA=+25° C

2000

VESD(MM)

Electrostatic discharge voltage

(machine model)

200

VESD(CDM)

Electrostatic discharge voltage

(charge device model)

750 on corner

pins, 500 on

others

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