L6591 datasheet(9/32 Pages) STMICROELECTRONICS

9 / 32 page

L6591

Electrical characteristics

9/32

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VCCrestart HV generator restart voltage

(1)

4.4

5.6

(1) After DIS tripping

12.2

13.2

14.2

Reference voltage

VREF

Output voltage

(2) T

J = 25 °C;

IREF = 1 mA

4.9

5.1

VREF

Total variation

Vcc= 9.2 to 22 V,

IREF = 1 to 5 mA

4.8

5.2

IREF

Short circuit current

VREF = 0

Sink capability in UVLO

Vcc = 6 V;

Isink = 0.5 mA

0.2

0.5

Current sense comparator

IISEN

Input bias current

VISEN = 0

-1

µA

tLEB

Leading edge blanking

After VHVG low-to-high

transition

200

td(H-L)

Delay to output

170

Gain

3.8

4.2

V/V

VISENx

Maximum signal

(2) V

COMP = 5 V

0.76

0.8

0.84

VISENdis Hiccup-mode OCP level

(2)

1.4

1.5

1.65

PWM control and burst-mode control

VCOMPH Maximum level

ICOMP = 0

5.5

ICOMP

Source current

VCOMP = 2 V

240

320

400

µA

RCOMP

Dynamic resistance

VCOMP = 2 to 4 V

Ω

VCOMPBon Burst-mode on threshold

(2) V

COMP falling

1.68

1.75

1.82

Hys

Burst-mode hysteresis

VCOMP rising

Dmax

Maximum duty cycle

VCOMP = 5 V

Adaptive UVLO

VCOMPL UVLO shift threshold

(2)

1.9

2.1

Line sensing

Vth

Threshold voltage

Voltage rising or falling

1.22

1.25

1.28

IHys

Current hysteresis

Vcc > 5 V

13.2

14.7

16.2

µA

Vclamp

Clamp level

ILINE = 1 mA

2.8

Table 4.

Electrical characteristics (continued)

(TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 kΩ,

CT = 330 pF; unless otherwise specified)

L6591 数据表(PDF) 9 Page - STMicroelectronics

L6591 数据表(HTML) 9 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

数据表下载