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L6591 数据表(PDF) 11 Page - STMicroelectronics |
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L6591 数据表(HTML) 11 Page - STMicroelectronics |
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11 / 32 page ![]() L6591 Electrical characteristics 11/32 Symbol Parameter Test condition Min Typ Max Unit tr Rise time 80 ns UVLO saturation Vcc = 0 to VccOn, Isink = 1 mA 1.1 V High-side gate driver (voltages referred to FGND) VHVGL Output low voltage Isink = 200 mA 1.5 V VHVGH Output high voltage Isource = 5 mA 11 11.9 V Isourcepk Peak source current (3) -0.3 A Isinkpk Peak sink current (3) 0.8 A tf Fall time 40 ns tr Rise time 80 ns Pull-down resistor 25 k Ω 1. Parameters in tracking each other 2. Parameters in tracking each other 3. Parameters guaranteed by design Table 4. Electrical characteristics (continued) (TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 kΩ, CT = 330 pF; unless otherwise specified) |
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