L6591 datasheet(10/32 Pages) STMICROELECTRONICS

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Electrical characteristics

L6591

10/32

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

DIS function

IOTP

Input bias current

VDIS = 0 to Vth

-1

µA

Vth

Disable threshold

4.275

4.5

4.725

Oscillator and dead-time programming

fosc

Oscillation frequency

TJ = 25 °C

170

180

190

kHz

Vcc = 9.2 to 22 V

168

180

192

kHz

Vpk

Oscillator peak voltage

(2)

2.85

3.15

Vvy

Oscillator valley voltage

(2)

0.75

0.9

1.05

Tdead

Dead-time

(VHVG high-to-low to VLVG

low-to-high transition)

0.42

µs

CT = 1 nF

1.0

Dead-time (VLVG high-to-low

to VHVG low-to-high

transition)

0.42

CT = 1 nF

1.0

Soft-start

ISSC

Charge current

TJ = 25 °C, VSS < 1.5 V,

VCOMP = 4 V

µA

TJ = 25 °C, VSS > 1.5 V,

VCOMP = VCOMPH

3.0

4.2

5.4

ISsdis

Discharge current

VSS > 1.5 V

3.0

4.2

5.4

µA

VSsclamp High saturation voltage

VCOMP = 4 V

VSSDIS

Disable level

(2) V

COMP = VCOMPH

4.85

5.15

VSSLAT

Latch-off level

VCOMP = VCOMPH

6.4

PFC_STOP function

Ileak

High level leakage current

VPFC_STOP = Vcc,

VCOMP = 2 V

µA

Low saturation level

IPFC_STOP = 2 mA

VCOMP = 1.5 V

0.1

Low-side gate driver (voltages referred to GND)

VLVGL

Output low voltage

Isink = 200 mA

1.0

VLVGH

Output high voltage

Isource = 5 mA

12.8

13.3

Isourcepk Peak source current

(3)

-0.3

Isinkpk

Peak sink current (3)

0.8

Fall time

Table 4.

Electrical characteristics (continued)

(TJ = 0 to 105 °C, Vcc = 15 V, VBOOT = 12 V, CHVG = CLVG = 1 nF; RT = 22 kΩ,

CT = 330 pF; unless otherwise specified)

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