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ST72141K 数据表(PDF) 13 Page - STMicroelectronics |
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ST72141K 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 132 page  ST72141K 13/132 1.5 EPROM PROGRAM MEMORY The program memory of the OTP and EPROM de- vices can be programmed with EPROM program- ming tools available from STMicroelectronics. EPROM Erasure EPROM devices are erased by exposure to high intensity UV light admitted through the transparent window. This exposure discharges the floating gate to its initial state through induced photo cur- rent. It is recommended that the EPROM devices be kept out of direct sunlight, since the UV content of sunlight can be sufficient to cause functional fail- ure. Extended exposure to room level fluorescent lighting may also cause erasure. An opaque coating (paint, tape, label, etc...) should be placed over the package window if the product is to be operated under these lighting con- ditions. Covering the window also reduces IDD in power-saving modes due to photo-diode leakage currents. |
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