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M48T02 数据表(PDF) 20 Page - STMicroelectronics |
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M48T02 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 24 page ![]() DC and AC parameters M48T02, M48T12 20/24 Table 10. Power down/up AC characteristics Table 11. Power down/up trip points DC characteristics Symbol Parameter(1) 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted). Min Max Unit tPD E or W at VIH before Power Down 0 µs tF (2) 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC passes VPFD (min). VPFD (max) to VPFD (min) VCC Fall Time 300 µs tFB (3) 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. VPFD (min) to VSS VCC Fall Time 10 µs tR VPFD (min) to VPFD (max) VCC Rise Time 0 µs tRB VSS to VPFD (min) VCC Rise Time 1 µs trec E or W at VIH before Power Up 2 ms Symbol Parameter(1)(2) 1. All voltages referenced to VSS. 2. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted). Min Typ Max Unit VPFD Power-fail Deselect Voltage M48T02 4.5 4.6 4.75 V M48T12 4.2 4.3 4.5 V VSO Battery Back-up Switchover Voltage 3.0 V tDR (3) 3. At 25°C; VCC = 0V. Expected Data Retention Time 10 YEARS |
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