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M30833FJGP 数据表(PDF) 57 Page - Renesas Technology Corp |
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M30833FJGP 数据表(HTML) 57 Page - Renesas Technology Corp |
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57 / 94 page ![]() Page 57 1 9 f o 6 0 0 2 , 1 3 . n a J 1 4 . 1 . v e R 1 4 1 0 - 3 1 0 0 B 3 0 J E R ) T 3 8 / C 2 3 M , 3 8 / C 2 3 M ( p u o r G 3 8 / C 2 3 M BCLK ALE 18ns.max -2ns.min RD 18ns.max -5ns.min Hi-Z DB 0ns.min td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) 26ns.min(1) tac2(RD-DB)(2) CSi td(BCLK-CS) 18ns.max(1) ADi 18ns.max(1) th(BCLK-AD) -3ns.min th(BCLK-CS) -3ns.min BHE tcyc td(BCLK-AD) tac2(AD-DB)(2) WR,WRL, WRH 18ns.max BCLK CSi 18ns.max ADi 18ns.max -3ns.min -3ns.min tcyc BHE DBi td(BCLK-WR) ALE 18ns.max -2ns.min Vcc=5V th(BCLK-RD) th(RD-DB) tsu(DB-BCLK) th(RD-CS) 0ns.min td(BCLK-CS) td(BCLK-AD) td(BCLK-ALE) th(BCLK-AD) th(BCLK-CS) th(WR-CS)(3) td(DB-WR)(3) th(WR-DB)(3) th(WR-AD)(3) td(DB-WR)=(tcyc x n-20)ns.min (n=1 with 1 wait state, n=2 with 2 wait states and n=3 with 3 wait states) th(WR-DB)=(tcyc/2-10)ns.min th(WR-AD)=(tcyc/2-10)ns.min th(WR-CS)=(tcyc/2-10)ns.min tw(WR)=(tcyc/2 x n-15)ns.min (n=1 with 1 wait state, n=3 with 2 wait states and n=5 with 3 wait states) NOTES: 3. Varies with operation frequency: Measurement conditions • VCC=4.2 to 5.5V • Input high and low voltage: VIH=2.5V, VIL=0.8V • Output high and low voltage: VOH=2.0V, VOL=0.8V th(BCLK-ALE) Read Timing Write Timing (written in 2 cycles with no wait state) Memory Expansion Mode and Microprocessor Mode (with a wait state) th(RD-AD) tw(WR)(3) th(BCLK-WR) 0ns.min Notes : 1. Value guaranteed only when the microcomputer is used independently. A maximum of 35ns is guaranteed for td(BCLK-AD)+tsu(DB-BCLK). 2. Varies with operation frequency: tac2(RD-DB)=(tcyc/2 x m-35)ns.max (m=3 with 1 wait state, m=5 with 2 wait states and m=7 with 3 wait states.) tac2(AD-DB)=(tcyc x n-35)ns.max (n=2 with 1 wait state, n=3 with 2 wait states and n=4 with 3 wait states.) -3ns.min Figure 5.3 VCC=5V Timing Diagram (2) |
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