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PI2002 数据表(PDF) 16 Page - Vicor Corporation

部件名 PI2002
功能描述  Active ORing Controller IC with Load Disconnect Feature
PDF  23 Pages
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制造商  VICOR [Vicor Corporation]
网页  http://www.vicorpower.com
标志 VICOR - Vicor Corporation

PI2002 数据表(HTML) 16 Page - Vicor Corporation

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Picor Corporation • picorpower.com
PI2002
Rev1.1 Page 16 of 23
Ra
I
:
Ra current.
Alternatively,
a
two-resistor
voltage
divider
configuration can be used and is shown in (Figure 18).
Figure 18: Two-resistor divider configuration
The UV resistor voltage divider can be obtained from
the following equations:
RUV
TH
UV
I
UV
V
R
)
(
1
=
Set
UV
R1 value based on system allowable current
A
I
RUV
μ
100
≥
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
1
)
(
)
(
1
2
TH
UV
UV
UV
V
UV
V
R
R
Where:
)
(
TH
UV
V
: UV threshold voltage
RUV
I
:
UV
R1
current
RUV
TH
UV
I
UV
V
R
)
(
1
=
Set
OV
R1 value based on system allowable current
A
I
RUV
μ
100
≥
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
1
)
(
)
(
1
2
TH
OV
OV
OV
V
OV
V
R
R
Where:
)
(
TH
OV
V
: OV threshold voltage
ROV
I
:
OV
R1
current
Typical application Example 1:
High Side Active ORing:
Requirement:
Redundant Bus Voltage = 3.3V
Load Current = 15A (assume through each redundant
path)
Maximum Ambient Temperature = 75°C
Auxiliary Voltage = 12V (11V to 13V)
Solution:
1. A single PI2002 with two suitable external
MOSFETs for each redundant 3.3V power source
should be used, configured as shown in the circuit
schematic in Figure 19
2. Select a suitable N-Channel MOSFET:
Most
industry standard MOSFETs have a Vgs rating of
+/-12V or higher. Select an N-Channel MOSFET
with a low Rds(on) which is capable of supporting
the full load current with some margin, so a
MOSFET capable of at least 18A in steady state
is reasonable.
An exemplary MOSFET having
these characteristic is FDS6162N7 from Fairchild.
From FDS6162N7 datasheet:
•
N-Channel MOSFET
•
VDS= 20V
•
ID = 23A continuous drain current
•
VGS(MAX)=
± 12V
•
RθJA= 40°C/W
•
RDS(on)=2.9mΩ typical at ID=23A, VGS≥4.5V,
TJ=25°C
Reverse current threshold is:
A
m
mV
on
Rds
V
I
TH
RVS
RVS
03
.
1
9
.
2
*
2
6
)
(
*
2
−
=
Ω
−
=
=
−
Forward over-current threshold is:
A
m
mV
on
Rds
V
I
TH
FOC
FOC
66
.
19
9
.
2
*
2
114
)
(
*
2
=
Ω
=
=
−
Power dissipation final junction temperature for
each MOSFET:
Rds(on) is 3.5mΩ maximum at 25°C & 4.5Vgs and will
increase as the temperature increases. Add 25°C to
maximum ambient temperature to compensate for the
temperature rise due to power dissipation. At 100°C
(75°C + 25°C) Rds(on) will increase by 28%.
Ω
=
∗
Ω
=
m
m
on
Rds
48
.
4
28
.
1
5
.
3
)
(
maximum at 100°C
)
(
2
on
Rds
Is
Rth
Trise
JA
∗
∗
=
Maximum Junction temperature
Trise
T
T
A
J
+
=
max
C
m
A
W
C
C
T
J
°
=
⎟
⎠
⎞
⎜
⎝
⎛
Ω
∗
∗
°
+
°
=
115
48
.
4
)
15
(
40
75
2
max



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