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STM32F107VB 数据表(PDF) 53 Page - STMicroelectronics |
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STM32F107VB 数据表(HTML) 53 Page - STMicroelectronics |
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53 / 95 page ![]() STM32F105xx, STM32F107xx Electrical characteristics Doc ID 15274 Rev 4 53/95 5.3.12 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 35 are derived from tests performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL compliant. All I/Os are CMOS and TTL compliant (no software configuration required), their characteristics consider the most strict CMOS-technology or TTL parameters: G For VIH: –if VDD is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included –if VDD is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included G For VIL: –if VDD is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included –if VDD is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included Table 35. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage TTL ports –0.5 0.8 V VIH Standard IO input high level voltage 2 VDD+0.5 IO FT(1) input high level voltage 2 5.5V VIL Input low level voltage CMOS ports –0.5 0.35 VDD V VIH Input high level voltage 0.65 VDD VDD+0.5 Vhys Standard IO Schmitt trigger voltage hysteresis(2) 200 mV IO FT Schmitt trigger voltage hysteresis(2) 5% VDD (3) mV Ilkg Input leakage current (4) VSS VIN VDD Standard I/Os ‒1 µA VIN= 5 V, I/O FT 3 RPU Weak pull-up equivalent resistor(5) All pins except for PA10 VIN ?"VSS 30 40 50 kY PA10 8 11 15 RPD Weak pull-down equivalent resistor(5) All pins except for PA10 VIN ?"VDD 30 40 50 kY PA10 8 11 15 CIO I/O pin capacitance 5 pF 1. FT = Five-volt tolerant. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production. 3. With a minimum of 100 mV. 4. Leakage could be higher than max. if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order) . |
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