STM32F103C4T6ATR datasheet(52/80 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F103x4, STM32F103x6

52/80

Doc ID 15060 Rev 3

5.3.12

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 34 are derived from tests

performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL

compliant.

All I/Os are CMOS and TTL compliant (no software configuration required), their

characteristics consider the most strict CMOS-technology or TTL parameters:

●

For VIH:

–if VDD is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included

–if VDD is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included

●

For VIL:

–if VDD is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included

–if VDD is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included

Table 34.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage

TTL ports

–0.5

0.8

VIH

Standard IO input high level

voltage

2VDD+0.5

IO FT(1) input high level voltage

FT = Five-volt tolerant.

25.5V

VIL

Input low level voltage

CMOS ports

–0.5

0.35 VDD

VIH

Input high level voltage

0.65 VDD

VDD+0.5

Vhys

Standard IO Schmitt trigger

voltage hysteresis(2)

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in

production.

200

IO FT Schmitt trigger voltage

hysteresis(2)

5% VDD

(3)

With a minimum of 100 mV.

Ilkg

Input leakage current (4)

Leakage could be higher than max. if negative current is injected on adjacent pins.

VSS  VIN  VDD

Standard I/Os

1

µA

VIN= 5 V

I/O FT

RPU

Weak pull-up equivalent

resistor(5)

Pull-up and pull-down resistors are designed with a true resistance in series with a switchable

PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order)

VIN VSS



RPD

Weak pull-down equivalent

resistor(5)

VIN VDD



CIO

I/O pin capacitance

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