STM32F103C4T6ATR datasheet(49/80 Pages) STMICROELECTRONICS

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STM32F103x4, STM32F103x6

Electrical characteristics

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Table 29.

Flash memory endurance and data retention

5.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the

device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

●

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

●

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 30. They are based on the EMS levels and classes

defined in application note AN1709.

IDD

Supply current

Read mode

fHCLK = 72 MHz with 2 wait

states, VDD = 3.3 V

Write / Erase modes

fHCLK = 72 MHz, VDD = 3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Guaranteed by design, not tested in production.

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization, not tested in production.

Typ

Max

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

Table 28.

Flash memory characteristics (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

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