LSM303DLH datasheet(12/47 Pages) STMICROELECTRONICS

12 / 47 page

Module specifications

LSM303DLH

12/47

Doc ID 16941 Rev 1

LA_TCSo

Linear acceleration sensitivity

change vs. temperature

FS bit set to 00

±0.01

%/°C

LA_TyOff

Linear acceleration typical

zero-

g level offset

accuracy(3),(4)

FS bit set to 00

±20

LA_TCOff

Linear acceleration zero-

g level

change vs temperature

Max delta from 25 °C

±0.1

g/°C

LA_An

Acceleration noise density

FS bit set to 00

218

g/√ Hz

LA_Vst

Linear acceleration self-test

output change(5),(6),(7)

FS bit set to 00

X axis

300

LSb

FS bit set to 00

Y axis

-300

LSb

FS bit set to 00

Z axis

350

LSb

M_CAS

Magnetic cross-axis sensitivity

Cross field = 0.5 gauss

Happlied = ±3 gauss

±1

%FS/

gauss

M_EF

Maximum exposed field

No permitting effect on

zero reading

10000

gauss

M_ST

Magnetic self test

Positive bias mode, GN

bits set to 100 on X, Y axis

270

LSB

Positive bias mode, GN

bits set to 100 on Z axis

255

LSB

M_R

Magnetic resolution

Vdd = 3 V

mgauss

M_DF

Disturbing field

Sensitivity starts to

degrade. User S/R pulse to

restore sensitivity

gauss

Top

Operating temperature range

-30

+85

°C

Typical specifications are not guaranteed

Verified by wafer level test and measurement of initial offset and sensitivity

Typical zero-

g level offset value after MSL3 preconditioning

Offset can be eliminated by enabling the built-in high-pass filter

The sign of “Self-test output change” is defined by the CTRL_REG4 STsign bit (

Table 29), for all axes.

Self-test output changes with the power supply. “Self-test output change” is defined as

OUTPUT[LSb](CTRL_REG4 ST bit=1) - OUTPUT[LSb](CTRL_REG4 ST bit=0). 1LSb=4g/4096 at 12bit representation, ±2 g full-scale

Output data reach 99% of final value after 1/ODR+1ms when enabling self-test mode, due to device filtering

Table 3.

Mechanical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.(1)

Max.

Unit

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