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PCF2129AT 数据表(PDF) 18 Page - NXP Semiconductors

部件名 PCF2129AT
功能描述  Integrated RTC, TCXO and quartz crystal
PDF  68 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PCF2129AT 数据表(HTML) 18 Page - NXP Semiconductors

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PCF2129A_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 13 January 2010
18 of 68
NXP Semiconductors
PCF2129A
Integrated RTC, TCXO and quartz crystal
The output pin BBS can be used as a supply for battery backup devices such as SRAM
(see Ref. 3 “AN10857”). For this case, Figure 7 shows the typical driving capability when
VBBS is driven from VDD.
8.5.3 Battery low detection function
The PCF2129A has a battery low detection circuit which monitors the status of the battery
VBAT.
When VBAT drops below the threshold value Vth(bat)low (typically 2.5 V) the BLF flag
(register Control_3) is set to indicate that the battery is low and that it must be replaced. A
low battery will not ensure data integrity during periods of backup battery operation.
Monitoring of the battery voltage also occurs during battery operation.
When VBAT drops below the threshold value Vth(bat)low, the following sequence occurs (see
Figure 8):
1. The battery low flag BLF is set logic 1.
2. An interrupt is generated if the control bit BLIE (register Control_3) is enabled
(see Section 8.12.7).
3. The flag BLF remains logic 1 until the battery is replaced. BLF cannot be cleared
using the interface. It is cleared automatically by the battery low detection circuit when
the battery is replaced.
Fig 8.
Battery low detection behavior with bit BLIE logic 1 (enabled)
001aaj322
internal power supply (= VBBS)
VBAT
BLF
Vth(bat)low
(= 2.5 V)
VBAT
VDD = VBBS
INT



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