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STM32F100V8H7B 数据表(PDF) 51 Page - STMicroelectronics

部件名 STM32F100V8H7B
功能描述  Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU
PDF  84 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F100V8H7B 数据表(HTML) 51 Page - STMicroelectronics

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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 2
51/84
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA–40 to +105 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA –40 to +105 °C
20
40
ms
tME
Mass erase time
TA –40 to +105 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 24 MHz, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 24 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
Table 28.
Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20



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