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STM6600AS24DM6F 数据表(PDF) 49 Page - STMicroelectronics |
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STM6600AS24DM6F 数据表(HTML) 49 Page - STMicroelectronics |
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49 / 51 page ![]() STM6600 - STM6601 Product selector Doc ID 15453 Rev 7 49/51 Table 11. STM6601 product selector Full part number EN or EN(1) 1. EN (or EN) output is push-pull. RST, INT, PBOUT and VCCLO outputs are open drain. After long push(2) 2. After tSRD expires through long push, either device reset (RST) will be activated for tREC (240 ms min.) or the EN (or EN) pin will be deasserted. The additional Smart Reset™ delay time, tSRD, can be adjusted by the user at 10 s/µF (typ.) by connecting the external capacitor to the CSRD pin. Internal resistor on SR input Power-on lockout voltage VTH+ (V) Forced power-off voltage VTH- (V) tON_BLANK (s) at startup (min.) tON_BLANK (s) at reset (min.) Top marking(3) 3. Where “p” = assembly plant, “y” = assembly year (0 to 9) and “ww” = assembly work week (01 to 52). STM6601AQ2BDM6F EN RST pull-up 3.30 3.10 1.4 1.4 pyww AQ2B STM6601AU2DDM6F EN RST pull-up 3.50 3.30 5.6 5.6 pyww AU2D STM6601BM2DDM6F EN RST pull-up 3.10 2.90 5.6 5.6 pyww BM2D STM6601BS2BDM6F EN RST pull-up 3.40 3.20 1.4 1.4 pyww BS2B STM6601CM2DDM6F EN EN pull-up 3.10 2.90 5.6 — pyww CM2D STM6601CQ2BDM6F EN EN pull-up 3.30 3.10 1.4 — pyww CQ2B STM6601DS2BDM6F EN EN pull-up 3.40 3.20 1.4 — pyww DS2B STM6601GU2BDM6F(4) 4. Please contact local ST sales office for availability. EN RST — 3.50 3.30 5.6 5.6 pyww GU2B |
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