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M48T08 数据表(PDF) 8 Page - STMicroelectronics |
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M48T08 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 31 page ![]() Operation modes M48T08, M48T08Y, M48T18 8/31 Doc ID 2411 Rev 10 2 Operation modes As Figure 4 on page 7 shows, the static memory array and the quartz-controlled clock oscillator of the M48T08/18/08Y are integrated on one silicon chip. The two circuits are interconnected at the upper eight memory locations to provide user accessible BYTEWIDE™ clock information in the bytes with addresses 1FF8h-1FFFh. The clock locations contain the year, month, date, day, hour, minute, and second in 24-hour BCD format. Corrections for 28, 29 (leap year - valid until 2100), 30, and 31 day months are made automatically. Byte 1FF8h is the clock control register. This byte controls user access to the clock information and also stores the clock calibration setting. The eight clock bytes are not the actual clock counters themselves; they are memory locations consisting of BiPORT™ READ/WRITE memory cells. The M48T08/18/08Y includes a clock control circuit which updates the clock bytes with current information once per second. The information can be accessed by the user in the same manner as any other location in the static memory array. The M48T08/18/08Y also has its own power-fail detect circuit. The control circuitry constantly monitors the single 5 V supply for an out-of-tolerance condition. When VCC is out of tolerance, the circuit write protects the SRAM, providing a high degree of data security in the midst of unpredictable system operation brought on by low VCC. As VCC falls below the battery backup switchover voltage (VSO), the control circuitry connects the battery which maintains data and clock operation until valid power returns. Table 2. Operating modes Note: X = VIH or VIL ; VSO = Battery backup switchover voltage. Mode VCC E1 E2 G W DQ0-DQ7 Power Deselect 4.75 to 5.5 V or 4.5 to 5.5 V VIH X X X High Z Standby Deselect X VIL X X High Z Standby WRITE VIL VIH XVIL DIN Active READ VIL VIH VIL VIH DOUT Active READ VIL VIH VIH VIH High Z Active Deselect VSO to VPFD(min) (1) 1. See Table 11 on page 22 for details. XXX X High Z CMOS standby Deselect ≤ VSO(1) X X X X High Z Battery backup mode |
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