M48T08 datasheet(22/31 Pages) STMICROELECTRONICS

22 / 31 page

DC and AC parameters

M48T08, M48T08Y, M48T18

22/31

Doc ID 2411 Rev 10

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where

noted).

Min

Max

Unit

tPD

E1 or W at VIH or E2 at VIL before power-down

µs

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200 µs after VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time

µs

VPFD (min) to VPFD (max) VCC rise time

µs

tRB

VSS to VPFD (min) VCC rise time

µs

trec

E1 or W at VIH or E2 at VIL before power-up

tPFX

INT low to auto deselect

µs

tPFH

VPFD (max) to INT high

120

µs

Symbol

Parameter(1)(2)

All voltages referenced to VSS.

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where

noted).

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

M48T08

4.5

4.6

4.75

M48T18/T08Y

4.2

4.3

4.5

VSO

Battery backup switchover voltage

3.0

tDR

Expected data retention time

10(3)

At 55 °C, VCC = 0 V; tDR = 8.5 years (typ) at 70 °C. Requires use of M4T32-BR12SH SNAPHAT

® top when

using the SOH28 package.

Years

M48T08 数据表(PDF) 22 Page - STMicroelectronics

M48T08 数据表(HTML) 22 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

数据表下载