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M48T08 数据表(PDF) 10 Page - STMicroelectronics |
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M48T08 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 31 page ![]() Operation modes M48T08, M48T08Y, M48T18 10/31 Doc ID 2411 Rev 10 Table 3. READ mode AC characteristics Note: Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.75 to 5.5 V or 4.5 to 5.5 V (except where noted). 2.2 WRITE mode The M48T08/18/08Y is in the WRITE mode whenever W, E1, and E2 are active. The start of a WRITE is referenced from the latter occurring falling edge of W or E1, or the rising edge of E2. A WRITE is terminated by the earlier rising edge of W or E1, or the falling edge of E2. The addresses must be held valid throughout the cycle. E1 or W must return high or E2 low for a minimum of tE1HAX or tE2LAX from chip enable or tWHAX from WRITE enable prior to the initiation of another READ or WRITE cycle. Data-in must be valid tDVWH prior to the end of WRITE and remain valid for tWHDX afterward. G should be kept high during WRITE cycles to avoid bus contention; however, if the output bus has been activated by a low on E1 and G and a high on E2, a low on W will disable the outputs tWLQZ after W falls. Symbol Parameter(1) M48T08/M48T18/T08Y Unit –100/–10 (T08Y) –150/–15 (T08Y) Min Max Min Max tAVAV READ cycle time 100 150 ns tAVQV Address valid to output valid 100 150 ns tE1LQV Chip enable 1 low to output valid 100 150 ns tE2HQV Chip enable 2 high to output valid 100 150 ns tGLQV Output enable low to output valid 50 75 ns tE1LQX Chip enable 1 low to output transition 10 10 ns tE2HQX Chip enable 2 high to output transition 10 10 ns tGLQX Output enable low to output transition 5 5 ns tE1HQZ Chip enable 1 high to output Hi-Z 50 75 ns tE2LQZ Chip enable 2 low to output Hi-Z 50 75 ns tGHQZ Output enable high to output Hi-Z 40 60 ns tAXQX Address transition to output transition 5 5 ns |
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