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STM32F103CBU6TR 数据表(PDF) 58 Page - STMicroelectronics |
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STM32F103CBU6TR 数据表(HTML) 58 Page - STMicroelectronics |
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58 / 96 page ![]() Electrical characteristics STM32F103x8, STM32F103xB 58/96 Doc ID 13587 Rev 12 5.3.12 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 34 are derived from tests performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL compliant. All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 25 and Figure 26 for standard I/Os, and in Figure 27 and Figure 28 for 5 V tolerant I/Os. Table 34. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Standard I/O input low level voltage –0.5 0.28 (VDD–2)+0.8 V I/O FT(1) input low level voltage –0.5 0.32 (VDD–2)+0.75 VIH Standard I/O input high level voltage 0.41 (VDD–2)+1.3 VDD+0.5 I/O FT(1) input high level voltage 0.42 (VDD–2)+1 5.5 Vhys Standard IO Schmitt trigger voltage hysteresis(2) 200 mV IO FT Schmitt trigger voltage hysteresis(2) 5% VDD (3) mV Ilkg Input leakage current (4) VSS VIN VDD Standard I/Os 1 µA VIN= 5 V I/O FT 3 RPU Weak pull-up equivalent resistor(5) VIN VSS 30 40 50 k RPD Weak pull-down equivalent resistor(5) VIN VDD 30 40 50 k CIO I/O pin capacitance 5 pF 1. FT = 5V tolerant. To sustain a voltage higher than VDD+0.5 the internal pull-up/pull-down resistors must be disabled. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production. 3. With a minimum of 100 mV. 4. Leakage could be higher than max. if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order) . |
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