STM32F103CBU6TR datasheet(91/96 Pages) STMICROELECTRONICS

91 / 96 page

STM32F103x8, STM32F103xB

Revision history

Doc ID 13587 Rev 12

91/96

18-Oct-2007

STM32F103CBT6, STM32F103T6 and STM32F103T8 root part

numbers added (see Table 2: STM32F103xx medium-density device

features and peripheral counts)

VFQFPN36 package added (see Section 6: Package characteristics).

All packages are ECOPACK® compliant. Package mechanical data

inch values are calculated from mm and rounded to 4 decimal digits

(see Section 6: Package characteristics).

Table 5: Medium-density STM32F103xx pin definitions updated and

clarified.

Table 26: Low-power mode wakeup timings updated.

TA min corrected in Table 12: Embedded internal reference voltage.

Note 2 added below Table 22: HSE 4-16 MHz oscillator characteristics.

VESD(CDM) value added to Table 32: ESD absolute maximum ratings.

Note 3 added and VOH parameter description modified in Table 35:

Output voltage characteristics.

Note 1 modified under Table 36: I/O AC characteristics.

Equation 1 and Table 46: RAIN max for fADC = 14 MHz added to

Section 5.3.17: 12-bit ADC characteristics.

VAIN, tS max, tCONV, VREF+ min and tlat max modified, notes modified

and tlatr added in Table 45: ADC characteristics.

Figure 36: ADC accuracy characteristics updated. Note 1 modified

below Figure 37: Typical connection diagram using the ADC.

Electrostatic discharge (ESD) on page 57 modified.

Number of TIM4 channels modified in Figure 1: STM32F103xx

performance line block diagram.

Maximum current consumption Table 13, Table 14 and Table 15

updated. Vhysmodified in Table 34: I/O static characteristics.

Table 48: ADC accuracy updated. tVDD modified in Table 10: Operating

conditions at power-up / power-down. VFESD value added in Table 30:

EMS characteristics.

Values corrected, note 2 modified and note 3 removed in Table 26:

Low-power mode wakeup timings.

Table 16: Typical and maximum current consumptions in Stop and

Standby modes: Typical values added for VDD/VBAT = 2.4 V, Note 2

modified, Note 2 added.

Table 21: Typical current consumption in Standby mode added. On-chip

peripheral current consumption on page 48 added.

ACCHSI values updated in Table 24: HSI oscillator characteristics.

Vprog added to Table 28: Flash memory characteristics.

Upper option byte address modified in Figure 10: Memory map.

Typical fLSI value added in Table 25: LSI oscillator characteristics and

internal RC value corrected from 32 to 40 kHz in entire document.

TS_temp added to Table 49: TS characteristics. NEND modified in

Table 29: Flash memory endurance and data retention.

TS_vrefint added to Table 12: Embedded internal reference voltage.

Handling of unused pins specified in General input/output

characteristics on page 58. All I/Os are CMOS and TTL compliant.

Figure 38: Power supply and reference decoupling (VREF+ not

connected to VDDA) modified.

tJITTER and fVCO removed from Table 27: PLL characteristics.

Appendix A: Important notes on page 81 added.

Added Figure 15, Figure 16, Figure 18 and Figure 20.

Table 59.

Document revision history (continued)

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