STM8L15 datasheet(84/122 Pages) STMICROELECTRONICS

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Electrical parameters

STM8L151xx, STM8L152xx

84/122

Doc ID 15962 Rev 5

9.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Table 34.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization, not tested in production.

Flash memory

Halt mode (or Reset)

1.4

Table 35.

Flash program and data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.65

3.6

tprog

Programming time for 1 or 128 bytes (block)

erase/write cycles (on programmed byte)

6ms

Programming time for 1 to 128 bytes (block)

write cycles (on erased byte)

3ms

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

tRET

Data retention (program memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+55 °C

20(1)

years

Data retention (data memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+55 °C

20(1)

Data retention (data memory) after 10000

erase/write cycles at TA=+85 °C

TRET=+85 °C

1(1)

NRW

Erase/write cycles (program memory)

See notes (1)(2)

10(1)

kcycles

Erase/write cycles (data memory)

See notes (1)(3)

300(1)

(4)

Data based on characterization results, not tested in production.

Retention guaranteed after cycling is 10 years @ 55 °C.

Retention guaranteed after cycling is 1 year @ 55 °C.

Data based on characterization performed on the whole data memory.

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