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HT66F40 数据表(PDF) 39 Page - Holtek Semiconductor Inc

部件名 HT66F40
功能描述  Enhanced A/D Flash Type MCU 8-Bit MCU with EEPROM
PDF  244 Pages
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制造商  HOLTEK [Holtek Semiconductor Inc]
网页  http://www.holtek.com
标志 HOLTEK - Holtek Semiconductor Inc

HT66F40 数据表(HTML) 39 Page - Holtek Semiconductor Inc

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HT68F20/HT68F30/HT68F40/HT68F50/HT68F60
HT68FU30/HT68FU40/HT68FU50/HT68FU60
Rev. 1.60
39
October 24, 2011
Write Protection
Protection against inadvertent write operation is pro-
vided in several ways. After the device is powered-on
the Write Enable bit in the control register will be cleared
preventing any write operations. Also at power-on the
Bank Pointer, BP, will be reset to zero, which means that
Data Memory Bank 0 will be selected. As the EEPROM
control register is located in Bank 1, this adds a further
measure of protection against spurious write opera-
tions. During normal program operation, ensuring that
the Write Enable bit in the control register is cleared will
safeguard against incorrect write operations.
EEPROM Interrupt
The EEPROM write or read interrupt is generated when
an EEPROM write or read cycle has ended. The
EEPROM interrupt must first be enabled by setting the
DEE bit in the relevant interrupt register. However as the
EEPROM is contained within a Multi-function Interrupt,
the associated multi-function interrupt enable bit must
also be set. When an EEPROM write cycle ends, the
DEF request flag and its associated multi-function inter-
rupt request flag will both be set. If the global, EEPROM
and Multi-function interrupts are enabled and the stack
is not full, a jump to the associated Multi-function Inter-
rupt vector will take place. When the interrupt is serviced
only the Multi-function interrupt flag will be automatically
reset, the EEPROM interrupt flag must be manually re-
set by the application program. More details can be ob-
tained in the Interrupt section.
Programming Considerations
Care must be taken that data is not inadvertently written
to the EEPROM. Protection can be enhanced by ensur-
ing that the Write Enable bit is normally cleared to zero
when not writing. Also the Bank Pointer could be nor-
mally cleared to zero as this would inhibit access to
Bank 1 where the EEPROM control register exist. Al-
though certainly not necessary, consideration might be
given in the application program to the checking of the
validity of new write data by a simple read back process.
· Programming Examples
¨ Reading data from the EEPROM - polling method
MOV
A, EEPROM_ADRES
; user defined address
MOV
EEA, A
MOV
A, 040H
; setup memory pointer MP1
MOV
MP1, A
; MP1 points to EEC register
MOV
A, 01H
; setup Bank Pointer
MOV
BP, A
SET
IAR1.1
; set RDEN bit, enable read operations
SET
IAR1.0
; start Read Cycle - set RD bit
BACK:
SZ
IAR1.0
; check for read cycle end
JMP
BACK
CLR
IAR1
; disable EEPROM read/write
CLR
BP
MOV
A, EEDATA
; move read data to register
MOV
READ_DATA, A
¨ Writing Data to the EEPROM
- polling method
MOV
A, EEPROM_ADRES
; user defined address
MOV
EEA, A
MOV
A, EEPROM_DATA
; user defined data
MOV
EED, A
MOV
A, 040H
; setup memory pointer MP1
MOV
MP1, A
; MP1 points to EEC register
MOV
A, 01H
; setup Bank Pointer
MOV
BP, A
SET
IAR1.3
; set WREN bit, enable write operations
SET
IAR1.2
; start Write Cycle - set WR bit
BACK:
SZ
IAR1.2
; check for write cycle end
JMP
BACK
CLR
IAR1
; disable EEPROM read/write
CLR
BP



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