MMDF2C01HD

4

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

TJ = 25°C

VGS = 2.7 V

4.5 V

0

2

4

8

0.03

0.04

0.05

0.06

0.07

0

2

4

8

0.030

0.035

0.040

0.050

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

TJ = 25°C

ID = 2 A

6

– 50

– 25

0

25

50

75

100

125

150

0.045

6

0

2

4

8

0.1

0.20

0.25

0.30

0.35

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

ID = 1 A

6

0.15

Figure 3. On–Resistance versus

Gate–To–Source Voltage

0

0.8

1.6

4

0.10

0.15

0.20

0.30

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ = 25°C

VGS = 2.7 V

4.5 V

0.25

2.4

3.2

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

– 50

– 25

0

25

50

75

100

125

150

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.5

1

2

1.5

VGS = 4.5 V

ID = 2 A

0

0.5

1

2

1.5

VGS = 4.5 V

ID = 4 A