MMDF2C01HD

6

Motorola TMOS Power MOSFET Transistor Device Data

N–Channel

P–Channel

400

800

1200

2000

1600

8

0

8

12

VGS

VDS

4

4

TJ = 25°C

Ciss

Coss

Crss

VDS = 0 V

VGS = 0 V

0

Ciss

Crss

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

RG, GATE RESISTANCE (OHMS)

0.1

10

100

100

10

1

VDD = 6 V

ID = 4 A

VGS = 4.5 V

TJ = 25°C

tr

tf

td(off)

td(on)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

10

8

6

4

2

0

0

4

2

0

QT, TOTAL CHARGE (nC)

5

3

1

2

4

6

8

10

ID = 4 A

TJ = 25°C

VDS

VGS

Q2

Q3

Q1

1

QT

400

800

1200

2000

1600

8

0

8

12

VGS

VDS

4

4

TJ = 25°C

VDS = 0 V

VGS = 0 V

0

Crss

Ciss

Coss

Crss

Ciss

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)

Figure 7. Capacitance Variation

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

10

8

6

4

2

0

0

4

2

0

QT, TOTAL CHARGE (nC)

5

3

1

2

4

6

8

10

ID = 2 A

TJ = 25°C

VDS

VGS

QT

Q2

Q3

Q1

RG, GATE RESISTANCE (OHMS)

1

10

100

1000

100

10

VDD = 6 V

ID = 2 A

VGS = 4.5 V

TJ = 25°C

tr

tf

td(off)

td(on)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance