MMDF2C01HD

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)

Forward Voltage(2)

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

(N)

(P)

—

—

0.95

1.69

1.1

2.0

Vdc

Reverse Recovery Time

(IF = IS,

dIS/dt = 100 A/µs)

trr

(N)

(P)

—

—

38

48

—

—

ns

(IF = IS,

dIS/dt = 100 A/µs)

ta

(N)

(P)

—

—

17

23

—

—

(IF = IS,

dIS/dt = 100 A/µs)

tb

(N)

(P)

—

—

22

25

—

—

Reverse Recovery Stored Charge

QRR

(N)

(P)

—

—

0.028

0.05

—

—

µC

(1) Negative signs for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.4

0.8

TJ = 25°C

1.2

1.6

2

4.5 V

0.2

0.6

1

1.4

1.8

VGS = 8 V

3.1 V

2.7 V

2.5 V

2.3 V

2.1 V

1.9 V

1.5 V

1.7 V

1.3 V

0

0.4

0.8

1.2

1.6

2

0.2

0.6

1

1.4

1.8

0

2

4

8

6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

N–Channel

P–Channel

1

1.2

1.4

2.2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VDS ≥ 10 V

1.6

1.8

2

0

2

4

8

6

25

°C

100

°C

TJ = – 55°C

0

0.4

0.8

0

1

2

4

TJ = 25°C

1.2

4.5 V

3

1.6

2

3.1 V

VGS = 8 V

1.5 V

2.5 V

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1.7 V

0.2

0.6

1

1.4

1.8

1.9 V

2.1 V

2.3 V

2.7 V

1

1.2

1.4

2.8

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

VDS ≥ 10 V

1.6

1.8

2

0

1

2

4

3

25

°C

100

°C

TJ = – 55°C

2.2

2.4

2.6