MMDF2C01HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

(N)

(P)

20

12

—

—

—

—

Vdc

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 20 Vdc)

(VGS = 0 Vdc, VDS = 12 Vdc)

IDSS

(N)

(P)

—

—

—

—

1.0

1.0

µAdc

Gate–Body Leakage Current

(VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

—

—

100

nAdc

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

(N)

(P)

0.7

0.7

0.8

1.0

1.1

1.1

Vdc

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 4.5 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

—

—

0.035

0.16

0.045

0.18

Ohm

Drain–to–Source On–Resistance

(VGS = 2.7 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

—

—

0.043

0.2

0.055

0.22

Ohm

Forward Transconductance

(VDS = 2.5 Adc, ID = 2.0 Adc)

(VDS = 2.5 Adc, ID = 1.0 Adc)

gFS

(N)

(P)

3.0

3.0

6.0

4.75

—

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

—

—

425

530

595

740

pF

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

—

—

270

410

378

570

Transfer Capacitance

Crss

(N)

(P)

—

—

115

177

230

250

SWITCHING CHARACTERISTICS(3)

Turn–On Delay Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

—

—

13

21

26

45

ns

Rise Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

60

156

120

315

Turn–Off Delay Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

20

38

40

75

Fall Time

VGS = 2.7 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

29

68

58

135

Turn–On Delay Time

(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

(N)

(P)

—

—

10

16

20

35

Rise Time

(VDS = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tr

(N)

(P)

—

—

42

44

84

90

Turn–Off Delay Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

—

—

24

68

48

135

Fall Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

tf

(N)

(P)

—

—

28

54

56

110

Total Gate Charge

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

QT

(N)

(P)

—

—

9.2

9.3

13

13

nC

Gate–Source Charge

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

Q1

(N)

(P)

—

—

1.3

0.8

—

—

Gate–Drain Charge

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

Q2

(N)

(P)

—

—

3.5

4.0

—

—

VGS = 4.5 Vdc)

Q3

(N)

(P)

—

—

3.0

3.0

—

—

(1) Negative signs for P–Channel device omitted for clarity.

(continued)

(2) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.