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STM32F103CBT6 数据表(PDF) 98 Page - STMicroelectronics

部件名 STM32F103CBT6
功能描述  Clock, reset and supply management
PDF  102 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F103CBT6 数据表(HTML) 98 Page - STMicroelectronics

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Revision history
STM32F103x8, STM32F103xB
98/102
Doc ID 13587 Rev 14
14-Mar-2008
5
Figure 2: Clock tree on page 12 added.
Maximum TJ value given in Table 8: Thermal characteristics on
page 38.
CRC feature added (see CRC (cyclic redundancy check) calculation
unit on page 9 and Figure 11: Memory map on page 34 for address).
IDD modified in Table 16: Typical and maximum current consumptions in
Stop and Standby modes.
ACCHSI modified in Table 24: HSI oscillator characteristics on page 55,
note 2 removed.
PD, TA and TJ added, tprog values modified and tprog description clarified
in Table 28: Flash memory characteristics on page 57.
tRET modified in Table 29: Flash memory endurance and data retention.
VNF(NRST) unit corrected in Table 38: NRST pin characteristics on
page 67.
Table 42: SPI characteristics on page 71 modified.
IVREF added to Table 46: ADC characteristics on page 75.
Table 48: ADC accuracy - limited test conditions added. Table 49: ADC
accuracy modified.
LQFP100 package specifications updated (see Section 6: Package
characteristics on page 80).
Recommended LQFP100, LQFP 64, LQFP48 and VFQFPN36
footprints added (see Figure 48, Figure 51, Figure 55 and Figure 42).
Section 6.2: Thermal characteristics on page 91 modified,
Section 6.2.1 and Section 6.2.2 added.
Appendix A: Important notes on page 81 removed.
21-Mar-2008
6
Small text changes. Figure 11: Memory map clarified.
In Table 29: Flash memory endurance and data retention:
–NEND tested over the whole temperature range
– cycling conditions specified for tRET
–tRET min modified at TA = 55 °C
V25, Avg_Slope and TL modified in Table 50: TS characteristics.
CRC feature removed.
22-May-2008
7
CRC feature added back. Small text changes. Section 1: Introduction
modified. Section 2.2: Full compatibility throughout the family added.
IDD at TA max = 105 °C added to Table 16: Typical and maximum
current consumptions in Stop and Standby modes on page 45.
IDD_VBAT removed from Table 21: Typical current consumption in
Standby mode on page 47.
Values added to Table 41: SCL frequency (fPCLK1= 36 MHz.,VDD =
3.3 V) on page 70.
Figure 33: SPI timing diagram - slave mode and CPHA = 0 on page 72
modified. Equation 1 corrected.
tRET at TA = 105 °C modified in Table 29: Flash memory endurance and
data retention on page 58.
VUSB added to Table 44: USB DC electrical characteristics on page 74.
Figure 56: LQFP100 PD max vs. TA on page 93 modified.
Axx option added to Table 60: Ordering information scheme on
page 94.
Table 61.
Document revision history (continued)
Date
Revision
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