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ADP2380AREZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADP2380AREZ-R7
功能描述  20 V, 4 A Synchronous Step-Down Regulator with Low-Side Driver
PDF  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP2380AREZ-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADP2380
Rev. 0 | Page 3 of 28
SPECIFICATIONS
VIN = 12 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
PVIN
PVIN Voltage Range
VPVIN
4.5
20
V
Quiescent Current
IQ
No switching
2.2
2.8
3.4
mA
Shutdown Current
ISHDN
EN/SS = GND
85
125
170
µA
PVIN Undervoltage Lockout Threshold
PVIN rising
4.3
4.5
V
PVIN falling
3.7
3.9
V
FB
FB Regulation Voltage
VFB
0°C < TJ < 85°C
0.594
0.6
0.606
V
−40°C < TJ < +125°C
0.591
0.6
0.609
V
FB Bias Current
IFB
0.01
0.1
µA
ERROR AMPLIFIER (EA)
Transconductance
gm
340
470
590
µS
EA Source Current
ISOURCE
45
60
75
µA
EA Sink Current
ISINK
45
60
75
µA
INTERNAL REGULATOR (VREG)
VREG Voltage
VVREG
VPVIN = 12 V, IVREG = 50 mA
7.7
8
8.4
V
Dropout Voltage
VPVIN = 12 V, IVREG = 50 mA
350
mV
Regulator Current Limit
65
100
130
mA
SW
High-Side On Resistance1
VBST − VSW = 5 V
44
70
mΩ
High-Side Peak Current Limit
4.8
7
9
A
Negative Current-Limit Threshold Voltage2
20
mV
SW Minimum On Time
tMIN_ON
120
155
ns
SW Minimum Off Time
tMIN_OFF
195
280
ns
LOW-SIDE DRIVER (LD)
Rising Time2
tR
CDL = 2.2 nF; see Figure 17
20
ns
Falling Time2
tF
CDL = 2.2 nF; see Figure 20
10
ns
Sourcing Resistor
4
6.5
Ω
Sinking Resistor
2
4.5
Ω
BST
Bootstrap Voltage
VBOOT
4.7
5
5.6
V
OSCILLATOR (RT PIN)
Switching Frequency
fSW
RT pin connected to GND
210
290
350
kHz
RT pin open
410
540
650
kHz
ROSC = 100 kΩ
440
500
560
kHz
Switching Frequency Range
fSW
250
1400
kHz
SYNC
Synchronization Range
250
1400
kHz
SYNC Minimum Pulse Width
100
ns
SYNC Minimum Off Time
100
ns
SYNC Input High Voltage
1.3
V
SYNC Input Low Voltage
0.4
V
EN/SS
Enable Threshold
0.5
V
Internal Soft Start
1600
Clock cycles
SS Pin Pull-Up Current
ISS_UP
2.4
3.2
3.6
µA



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