MCP6482-ESLASHMS datasheet(3/50 Pages) MICROCHIP

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 2012-2013 Microchip Technology Inc.

DS20002322C-page 3

MCP6481/2/4

1.0

ELECTRICAL CHARACTERISTICS

1.1

Absolute Maximum Ratings †

VDD –VSS .................................................................................................................................... .....................................................6.5V

Current at Input Pins ................................................................................................................ ......................................................±2 mA

Analog Inputs (VIN+, VIN-)††............................................................................................................................VSS – 1.0V to VDD +1.0V

All Other Inputs and Outputs ...........................................................................................................................VSS – 0.3V to VDD +0.3V

Difference Input Voltage...........................................................................................................................................................VDD –VSS

Output Short-Circuit Current ................................................................................................................ ...................................continuous

Current at Output and Supply Pins ............................................................................................................... ..............................±55 mA

Storage Temperature ................................................................................................................ .....................................-65°C to +150°C

Maximum Junction Temperature (TJ)................................................................................................................ ...........................+150°C

ESD protection on all pins (HBM)

 4kV

Note 1: See Section 4.1.2, Input Voltage Limits.

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended

periods may affect device reliability.

1.2

Specifications

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V, VSS = GND, TA = +25°C,

VCM =VDD/2, VOUT  VDD/2, VL =VDD/2 and RL =10 kto VL. (Refer to Figure 1-1).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Offset

Input Offset Voltage

VOS

-1.5

—

+1.5

VDD = 3.0V, VCM =VDD/4

Input Offset Drift with Temperature

V

OS/TA

—±2.5

—

µV/°C TA = -40°C to +125°C

Power Supply Rejection Ratio

PSRR

—

VCM =VDD/4

Input Bias Current and Impedance

Input Bias Current

—±1

—

—8

—

TA =+85°C

—

150

350

TA = +125°C

Input Offset Current

IOS

—

±0.1

—

Common Mode Input Impedance

ZCM

—1013||6

—

||pF

Differential Input Impedance

ZDIFF

—1013||6

—

||pF

Common Mode

Common Mode Input Voltage Range

VCMR

VSS -0.3

—

VDD +0.3

Common Mode Rejection Ratio

CMRR

—

VCM = -0.3V to 2.5V,

VDD =2.2V

—

VCM = -0.3V to 5.8V,

VDD =5.5V

Open-Loop Gain

DC Open-Loop Gain (Large Signal)

AOL

115

—

0.2V < VOUT <(VDD –0.2V)

VDD = 5.5V, VCM =VSS

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