MCP6482-ESLASHMS datasheet(4/50 Pages) MICROCHIP

4 / 50 page

MCP6481/2/4

DS20002322C-page 4

 2012-2013 Microchip Technology Inc.

Output

High-Level Output Voltage

VOH

2.180

2.196

—

VDD =2.2V

0.5V input overdrive

5.480

5.493

—

VDD =5.5V

0.5V input overdrive

Low-Level Output Voltage

VOL

—

0.004

0.020

VDD =2.2V

0.5 V input overdrive

—

0.007

0.020

VDD =5.5V

0.5 V input overdrive

Output Short-Circuit Current

ISC

—±12

—

VDD =2.2V

—±36

—

VDD =5.5V

Power Supply

Supply Voltage

VDD

2.2

—

5.5

Quiescent Current per Amplifier

100

240

400

µA

IO =0, VCM =VDD/4

TABLE 1-2:

AC ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND,

VCM =VDD/2, VOUT  VDD/2, VL =VDD/2, RL =10 kto VL and CL = 20 pF. (Refer to Figure 1-1).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

AC Response

Gain Bandwidth Product

GBWP

—

MHz

Phase Margin

—

G = +1V/V

Slew Rate

—

2.7

—

V/µs

Noise

Input Noise Voltage

Eni

—

µVp-p

f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

eni

—23

—

nV/

Hz f = 1 kHz

—18

—

nV/

Hz f = 10 kHz

Input Noise Current Density

ini

—0.6

—

fA/

Hz

f = 1 kHz

TABLE 1-1:

DC ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V, VSS = GND, TA = +25°C,

VCM =VDD/2, VOUT  VDD/2, VL =VDD/2 and RL =10kto VL. (Refer to Figure 1-1).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V and VSS = GND.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Operating Temperature Range

-40

—

+125

°C

Note 1

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 5L-SC-70



—

331

—

°C/W

Thermal Resistance, 5L-SOT-23



—

256

—

°C/W

Thermal Resistance, 8L-2x3 TDFN



—52.5

—

°C/W

Thermal Resistance, 8L-MSOP



—211

—

°C/W

Thermal Resistance, 8L-SOIC



—149.5

—

°C/W

Thermal Resistance, 14L-SOIC



—95.3

—

°C/W

Thermal Resistance, 14L-TSSOP



—

100

—

°C/W

Note 1: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.

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