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STM32F372VB 数据表(PDF) 54 Page - STMicroelectronics

部件名 STM32F372VB
功能描述  ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash32KB SRAM timers
PDF  128 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F372VB 数据表(HTML) 54 Page - STMicroelectronics

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Electrical characteristics
STM32F37x
54/128
Doc ID 022691 Rev 3
Depending on the SDADCx operation mode, there can be more constraints between
VREFSD+, VDDSD12 and VDDSD3 which are described in reference manual RM0313.
Table 20.
Current characteristics
Symbol
Ratings
Max.
Unit
IVDD(
Total current into sum of all VDD_x and VDDSDx power lines
(source)(1)
160
mA
IVSS(
Total current out of sum of all VSS_x and VSSSD ground lines
(sink)(1)
-160
IVDD(PIN)
Maximum current into each VDD_x or VDDSDx power pin (source)(1)
100
IVSS(PIN)
Maximum current out of each VSS_x or VSSSD ground pin (sink)(1)
-100
IIO(PIN)
Output current sunk by any I/O and control pin
25
Output current source by any I/O and control pin
- 25
I
IO(PIN)
Total output current sunk by sum of all IOs and control pins(2)
80
Total output current sourced by sum of all IOs and control pins(2)
-80
IINJ(PIN)
Injected current on FT, FTf and B pins(3)
-5/+0
Injected current on TC and RST pin(4)
± 5
Injected current on TTa pins(5)
± 5
I
INJ(PIN)
Total injected current (sum of all I/O and control pins)(6)
± 25
1.
VDDSD12 is the external power supply for PB2, PB10, and PE7 to PE15 I/O pins (the I/O pin ground is internally
connected to VSS). VDDSD3 is the external power supply for PB14 to PB15 and PD8 to PD15 I/O pins (the I/O pin ground
is internally connected to VSS). VDD (VDD_x) is the external power supply for all remaining I/O pins (the I/O pin ground is
internally connected to VSS).
2.
This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3.
Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4.
A positive injection is induced by VIN>VDD while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer to Table 19: Voltage characteristics for the maximum allowed input voltage values.
5.
A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 19: Voltage characteristics for the maximum allowed input voltage values. Negative injection
disturbs the analog performance of the device. See note (2) below Table 62.
6.
When several inputs are submitted to a current injection, the maximum
I
INJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).
Table 21.
Thermal characteristics
Symbol
Ratings
Value
Unit
TSTG
Storage temperature range
–65 to +150
°C
TJ
Maximum junction temperature
150
°C



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