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STM32F372VB 数据表(PDF) 70 Page - STMicroelectronics

部件名 STM32F372VB
功能描述  ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash32KB SRAM timers
PDF  128 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F372VB 数据表(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM32F37x
70/128
Doc ID 022691 Rev 3
6.3.6
Wakeup time from low-power mode
The wakeup times given in Table 37 are measured from the wakeup event trigger to the first
instruction executed by the CPU. The clock source used to wake up the device depends
from the current operating mode:
Stop or sleep mode: the wakeup event is WFE
WKUP1 (PA0) pin is used to wakeup from standby, stop and sleep modes.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 22.
6.3.7
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 12.
Table 37.
Low-power mode wakeup timings
Symbol
Parameter
Conditions
Typ @VDD = VDDA
Max
Unit
= 2.0 V = 2.4 V = 2.7 V
= 3 V
= 3.3 V
tWUSTOP
Wakeup from Stop
mode
Regulator in run mode
4.1
3.9
3.8
3.7
3.6
4.5
µs
Regulator in low
power mode
7.9
6.7
6.1
5.7
5.4
8.6
tWUSTANDBY
Wakeup from
Standby mode
LSI and IWDG off
62.6
53.7
49.2
45.7
42.7
100
tWUSLEEP
Wakeup from Sleep
mode
After WFE instruction
6
CPU
clock
cycles
Table 38.
High-speed external user clock characteristics
Symbol
Parameter(1)
1.
Guaranteed by design, not tested in production.
Conditions
Min
Typ
Max
Unit
fHSE_ext
User external clock source
frequency
18
32
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
0.3VDD
tw(HSEH)
tw(HSEL)
OSC_IN high or low time
15
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time
20



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