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STM32F373VC 数据表(PDF) 70 Page - STMicroelectronics |
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STM32F373VC 数据表(HTML) 70 Page - STMicroelectronics |
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70 / 128 page ![]() Electrical characteristics STM32F37x 70/128 Doc ID 022691 Rev 3 6.3.6 Wakeup time from low-power mode The wakeup times given in Table 37 are measured from the wakeup event trigger to the first instruction executed by the CPU. The clock source used to wake up the device depends from the current operating mode: ● Stop or sleep mode: the wakeup event is WFE ● WKUP1 (PA0) pin is used to wakeup from standby, stop and sleep modes. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22. 6.3.7 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the recommended clock input waveform is shown in Figure 12. Table 37. Low-power mode wakeup timings Symbol Parameter Conditions Typ @VDD = VDDA Max Unit = 2.0 V = 2.4 V = 2.7 V = 3 V = 3.3 V tWUSTOP Wakeup from Stop mode Regulator in run mode 4.1 3.9 3.8 3.7 3.6 4.5 µs Regulator in low power mode 7.9 6.7 6.1 5.7 5.4 8.6 tWUSTANDBY Wakeup from Standby mode LSI and IWDG off 62.6 53.7 49.2 45.7 42.7 100 tWUSLEEP Wakeup from Sleep mode After WFE instruction 6 CPU clock cycles Table 38. High-speed external user clock characteristics Symbol Parameter(1) 1. Guaranteed by design, not tested in production. Conditions Min Typ Max Unit fHSE_ext User external clock source frequency 18 32 MHz VHSEH OSC_IN input pin high level voltage 0.7VDD VDD V VHSEL OSC_IN input pin low level voltage VSS 0.3VDD tw(HSEH) tw(HSEL) OSC_IN high or low time 15 ns tr(HSE) tf(HSE) OSC_IN rise or fall time 20 |
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