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STM32F373VC 数据表(PDF) 77 Page - STMicroelectronics |
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STM32F373VC 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 128 page ![]() STM32F37x Electrical characteristics Doc ID 022691 Rev 3 77/128 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. 1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. 2. Guaranteed by design, not tested in production. Table 45. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA–40 to +105 °C 40 53.5 60 µs tERASE Page (2 kB) erase time TA –40 to +105 °C 20 40 ms tME Mass erase time TA –40 to +105 °C 20 40 ms IDD Supply current Write mode 10 mA Erase mode 12 mA Table 46. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Data based on characterization results, not tested in production. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 |
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