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STM8S003F3U6CTR 数据表(PDF) 63 Page - STMicroelectronics |
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STM8S003F3U6CTR 数据表(HTML) 63 Page - STMicroelectronics |
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63 / 100 page ![]() Unit Max Typ Min Conditions Parameter Symbol % 1.0 (3) User-trimmed with CLK_HSITRIMR register for Accuracy of HSI oscillator ACCHSI given VDD and TA conditions (1) 5 -5 VDD = 5 V, -40 °C ≤ TA ≤ 85 °C Accuracy of HSI oscillator (factory calibrated) μs 1.0 (3) HSI oscillator wakeup time tsu(HSI) including calibration μA 250 (2) 170 HSI oscillator power IDD(HSI) consumption (1) Refer to application note. (2) Data based on characterization results, not tested in production. (3) Guaranteed by design, not tested in production. Figure 19: Typical HSI frequency variation vs VDD @ 4 temperatures 63/100 DocID018576 Rev 3 Electrical characteristics STM8S003K3 STM8S003F3 |
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