| 数据搜索系统,热门电子元器件搜索 |
|
STM8S003F3U6CTR 数据表(PDF) 65 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM8S003F3U6CTR 数据表(HTML) 65 Page - STMicroelectronics |
|
65 / 100 page ![]() Flash program memory and data EEPROM Table 36: Flash program memory and data EEPROM Unit Max Typ Min (1) Conditions Parameter Symbol V 5.5 2.95 fCPU ≤ 16 MHz Operating voltage (all modes, execution/ write/erase) VDD ms 6.6 6 Standard programming time (including erase) for tprog byte/word/block (1 byte/ 4 bytes/64 bytes) 3.33 3 Fast programming time for 1 block (64 bytes) 3.33 3 Erase time for 1 block (64 bytes) terase cycles 100 TA = 85 °C Erase/write cycles (2) (program memory) NRW 100 k Erase/write cycles (2) (data memory) years 20 TRET = 55°C Data retention (program memory) after 100 erase/write cycles at TA = 85 °C tRET 20 Data retention (data memory) after 10 k erase/write cycles at TA = 85 °C 1 TRET = 85°C Data retention (data memory) after 100 k erase/write cycles at TA = 85 °C mA 2 Supply current (Flash programming or erasing IDD for 1 to 128 bytes) 65/100 DocID018576 Rev 3 Electrical characteristics STM8S003K3 STM8S003F3 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |