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LSM303DLH 数据表(PDF) 12 Page - STMicroelectronics |
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LSM303DLH 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 47 page ![]() Module specifications LSM303DLH 12/47 Doc ID 16941 Rev 1 LA_TCSo Linear acceleration sensitivity change vs. temperature FS bit set to 00 ±0.01 %/°C LA_TyOff Linear acceleration typical zero- g level offset accuracy(3),(4) FS bit set to 00 ±20 m g LA_TCOff Linear acceleration zero- g level change vs temperature Max delta from 25 °C ±0.1 m g/°C LA_An Acceleration noise density FS bit set to 00 218 µ g/√ Hz LA_Vst Linear acceleration self-test output change(5),(6),(7) FS bit set to 00 X axis 300 LSb FS bit set to 00 Y axis -300 LSb FS bit set to 00 Z axis 350 LSb M_CAS Magnetic cross-axis sensitivity Cross field = 0.5 gauss Happlied = ±3 gauss ±1 %FS/ gauss M_EF Maximum exposed field No permitting effect on zero reading 10000 gauss M_ST Magnetic self test Positive bias mode, GN bits set to 100 on X, Y axis 270 LSB Positive bias mode, GN bits set to 100 on Z axis 255 LSB M_R Magnetic resolution Vdd = 3 V 8 mgauss M_DF Disturbing field Sensitivity starts to degrade. User S/R pulse to restore sensitivity 20 gauss Top Operating temperature range -30 +85 °C 1. Typical specifications are not guaranteed 2. Verified by wafer level test and measurement of initial offset and sensitivity 3. Typical zero- g level offset value after MSL3 preconditioning 4. Offset can be eliminated by enabling the built-in high-pass filter 5. The sign of “Self-test output change” is defined by the CTRL_REG4 STsign bit ( Table 29), for all axes. 6. Self-test output changes with the power supply. “Self-test output change” is defined as OUTPUT[LSb](CTRL_REG4 ST bit=1) - OUTPUT[LSb](CTRL_REG4 ST bit=0). 1LSb=4g/4096 at 12bit representation, ±2 g full-scale 7. Output data reach 99% of final value after 1/ODR+1ms when enabling self-test mode, due to device filtering Table 3. Mechanical characteristics (continued) Symbol Parameter Test conditions Min. Typ.(1) Max. Unit Obsolete Product(s) - Obsolete Product(s) |
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