STM32F100C datasheet(52/98 Pages) STMICROELECTRONICS

52 / 98 page

Electrical characteristics

STM32F100xC, STM32F100xD, STM32F100xE

52/98

Doc ID 15081 Rev 7

Figure 14.

Typical application with a 32.768 kHz crystal

5.3.7

Internal clock source characteristics

The parameters given in Table 24 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 9.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

ai14129b

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32F10xxx

32.768 KH z

resonator

Resonator with

integrated capacitors

Bias

controlled

gain

CL2

Table 24.

HSI oscillator characteristics(1)

VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of HSI oscillator

TA = –40 to 105 °C

(2)

Based on characterization, not tested in production.

-2.4

2.5

TA = –10 to 85 °C

(2)

-2.2

1.3

TA = 0 to 70 °C

(2)

-1.9

1.3

TA = 25 °C

-1

tsu(HSI)

(3)

Guaranteed by design. Not tested in production

HSI oscillator startup time

µs

IDD(HSI)

(3) HSI oscillator power consumption

100

µA

Table 25.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

Frequency

kHz

tsu(LSI)

(2)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(2)

LSI oscillator power consumption

0.65

1.2

µA

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