STM32L152C6 datasheet(71/121 Pages) STMICROELECTRONICS

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STM32L151x6/8/B, STM32L152x6/8/B

Electrical characteristics

Doc ID 17659 Rev 8

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6.3.6

Internal clock source characteristics

The parameters given in Table 30 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 14.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Table 30.

HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

TRIM

(1)(2)

The trimming step differs depending on the trimming code. It is usually negative on the codes which are

multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

HSI user-trimmed

resolution

Trimming code is not a multiple of 16

± 0.4

0.7

Trimming code is a multiple of 16

± 1.5

ACCHSI

(2)

Based on characterization, not tested in production.

Accuracy of the

factory-calibrated

HSI oscillator

VDDA = 3.0 V, TA = 25 °C

-1(3)

Tested in production.

1(3)

VDDA = 3.0 V, TA = 0 to 55 °C

-1.5

1.5

VDDA = 3.0 V, TA = -10 to 70 °C

-2

VDDA = 3.0 V, TA = -10 to 85 °C

-2.5

VDDA = 3.0 V, TA = -10 to 105 °C

-4

VDDA = 1.65 V to 3.6 V

TA = -40 to 105 °C

-4

tSU(HSI)

(2)

HSI oscillator

startup time

3.7

µs

IDD(HSI)

(2)

HSI oscillator

power consumption

100

140

µA

Table 31.

LSI oscillator characteristics

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(1)

Tested in production.

LSI frequency

kHz

DLSI

(2)

This is a deviation for an individual part, once the initial frequency has been measured.

LSI oscillator frequency drift

0°C

≤ TA ≤ 85°C

-10

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

200

µs

IDD(LSI)

(3)

LSI oscillator power consumption

400

510

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