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数据搜索系统，热门电子元器件搜索 |
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STM32L152C6 数据表(PDF) 74 Page - STMicroelectronics |
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STM32L152C6 数据表(HTML) 74 Page - STMicroelectronics |
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74 / 121 page  Electrical characteristics STM32L151x6/8/B, STM32L152x6/8/B 74/121 Doc ID 17659 Rev 8 6.3.8 Memory characteristics The characteristics are given at TA = -40 to 105 °C unless otherwise specified. RAM memory Table 34. RAM and hardware registers Flash memory and data EEPROM Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware registers (only in Stop mode). STOP mode (or RESET) 1.65 V Table 35. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit VDD Operating voltage Read / Write / Erase 1.65 3.6 V tprog Programming time for word or half-page Erasing 3.28 3.94 ms Programming 3.28 3.94 IDD Average current during whole programme/erase operation TA = 25 °C, VDD = 3.6 V 300 µA Maximum current (peak) during programme/erase operation 1.5 2.5 mA |
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