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DSPIC30F0010AT-20E/PF 数据表(PDF) 56 Page - Microchip Technology |
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DSPIC30F0010AT-20E/PF 数据表(HTML) 56 Page - Microchip Technology |
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56 / 236 page ![]() dsPIC30F6010A/6015 DS70150C-page 54 © 2007 Microchip Technology Inc. 7.2 Erasing Data EEPROM 7.2.1 ERASING A BLOCK OF DATA EEPROM In order to erase a block of data EEPROM, the NVMADRU and NVMADR registers must initially point to the block of memory to be erased. Configure NVMCON for erasing a block of data EEPROM and set the WR and WREN bits in the NVMCON register. Setting the WR bit initiates the erase, as shown in Example 7-2. EXAMPLE 7-2: DATA EEPROM BLOCK ERASE 7.2.2 ERASING A WORD OF DATA EEPROM The NVMADRU and NVMADR registers must point to the block. Select a block of data Flash and set the WR and WREN bits in the NVMCON register. Setting the WR bit initiates the erase, as shown in Example 7-3. EXAMPLE 7-3: DATA EEPROM WORD ERASE ; Select data EEPROM block, WR, WREN bits MOV #4045,W0 MOV W0,NVMCON ; Initialize NVMCON SFR ; Start erase cycle by setting WR after writing key sequence DISI #5 ; Block all interrupts with priority <7 ; for next 5 instructions MOV #0x55,W0 ; MOV W0,NVMKEY ; Write the 0x55 key MOV #0xAA,W1 ; MOV W1,NVMKEY ; Write the 0xAA key BSET NVMCON,#WR ; Initiate erase sequence NOP NOP ; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle ; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete ; Select data EEPROM word, WR, WREN bits MOV #4044,W0 MOV W0,NVMCON ; Start erase cycle by setting WR after writing key sequence DISI #5 ; Block all interrupts with priority <7 ; for next 5 instructions MOV #0x55,W0 ; MOV W0,NVMKEY ; Write the 0x55 key MOV #0xAA,W1 ; MOV W1,NVMKEY ; Write the 0xAA key BSET NVMCON,#WR ; Initiate erase sequence NOP NOP ; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle ; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete |
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