Product Specification

PE9701

Page 5 of 13

Document No. 70-0035-02

│ www.psemi.com

©2003-2006 Peregrine Semiconductor Corp. All rights reserved.

Table 2. Absolute Maximum Ratings

Note 1:

Periodically sampled, not 100% tested. Tested per MIL-

STD-883, M3015 C2

Table 4. ESD Ratings

Electrostatic Discharge (ESD) Precautions

When handling this UltraCMOS™ device, observe

the same precautions that you would use with

other ESD-sensitive devices. Although this device

contains circuitry to protect it from damage due to

ESD, precautions should be taken to avoid

exceeding the specified rating in Table 4.

Latch-Up Avoidance

Unlike conventional CMOS devices, UltraCMOS™

devices are immune to latch-up.

Table 3. Operating Ratings

Symbol

Parameter/Conditions

Min

Max

Units

Supply voltage

-0.3

4.0

V

Voltage on any input

-0.3

+ 0.3

V

DC into any input

-10

+10

mA

DC into any output

-10

+10

mA

Storage temperature

range

-65

150

°C

Symbol

Parameter/Conditions

Min

Max

Units

Supply voltage

2.85

3.15

V

Operating ambient

temperature range

-40

85

°C

Symbol

Parameter/Conditions

Level

Units

ESD voltage (Human Body

Model) – Note 1

1000

V

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Operational supply current;

Prescaler disabled

Prescaler enabled

10

24

31

mA

mA

High level input voltage

V

Low level input voltage

V

High level input current

+70

µA

Low level input current

-1

µA

High level input current

+100

µA

Low level input current

-100

µA

High level input current

+70

µA

Low level input current

-5

µA

Output voltage LOW

0.4

V

Output voltage HIGH

V

Lock detect outputs: Cext, LD

Output voltage LOW, Cext

0.4

V

Output voltage HIGH, Cext

V

Output voltage LOW, LD

0.4

V

Charge Pump output: CP

Drive current

-2.6

-2

-1.4

mA

Drive current

1.4

2

2.6

mA

Leakage current

-1

1

µA

Sink vs. source mismatch

25

%

Output current magnitude variation vs. voltage

25

%