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AM29F100 数据表(PDF) 27 Page - Advanced Micro Devices |
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AM29F100 数据表(HTML) 27 Page - Advanced Micro Devices |
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27 / 36 page ![]() Am29F100 27 AC CHARACTERISTICS Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Symbol Parameter Description -70 -90 -120 -150 Unit JEDEC Standard tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 150 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 45 50 50 ns tDVWH tDS Data Setup Time Min 30 45 50 50 ns tWHDX tDH Data Hold Time Min 0 ns tGHWL tGHWL Read Recover Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 45 50 50 ns tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 14 µs tWHWH2 tWHWH2 Chip/Sector Erase Operation (Note 2) Typ 1.5 sec tVCS VCC Set Up Time (Note 1) Min 50 µs tRB Recovery Time from RY/BY# Min 0 ns tBUSY Program/Erase Valid to RY/BY# Delay Min 30 35 50 55 ns |
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