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AM29F100 数据表(PDF) 31 Page - Advanced Micro Devices |
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AM29F100 数据表(HTML) 31 Page - Advanced Micro Devices |
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31 / 36 page ![]() Am29F100 31 AC CHARACTERISTICS Erase and Program Operations Alternate CE# Controlled Writes Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter Symbol Parameter Description -70 -90 -120 -150 Unit JEDEC Standard tAVAV tWC Write Cycle Time (Note 1) Min 70 90 120 150 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 45 50 50 ns tDVEH tDS Data Setup Time Min 30 45 50 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 35 45 50 50 ns tEHEL tCPH CE# Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 14 µs tWHWH2 tWHWH2 Chip/Sector Erase Operation (Note 2) Typ 1.5 sec |
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