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AM29F400AT 数据表(PDF) 23 Page - Advanced Micro Devices

部件名 AM29F400AT
功能描述  4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  35 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F400AT 数据表(HTML) 23 Page - Advanced Micro Devices

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Am29F400AT/Am29F400AB
23
PRELIMINARY
DC CHARACTERISTICS (continued)
CMOS Compatible
Notes:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Program or Erase Algorithm is in progress.
3. Not 100% tested.
4. ICC3 = 20 µA max at extended temperatures (> +85°C).
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
±1.0
µA
ILIT
A9, OE, RESET Input Load
Current
VCC = VCC Max, A9, OE,
RESET = 12.5 V
50
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
±1.0
µA
ICC1
VCC Active Read Current (Note 1) CE = VIL, OE = VIH
Byte
20
40
mA
Word
28
50
ICC2
VCC Active Program/Erase
Current (Notes 2, 3)
CE = VIL, OE = VIH
30
50
mA
ICC3
VCC Standby Current (Note 4)
VCC = VCC Max, CE = VIH,
OE = VIH
15
µA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7 x
VCC
VCC +
0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC Min
0.45
V
VOH1
Output Low Voltage
IOH = –2.5 mA, VCC = VCC Min
0.85
VCC
V
VOH2
IOH = –100 µA, VCC = VCC Min
VCC -0.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V



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