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AM29F400AT 数据表(PDF) 25 Page - Advanced Micro Devices

部件名 AM29F400AT
功能描述  4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  35 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F400AT 数据表(HTML) 25 Page - Advanced Micro Devices

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Am29F400AT/Am29F400AB
25
PRELIMINARY
AC CHARACTERISTICS
Write (Erase/Program) Operations
Notes:
1. This does not include the preprogramming time.
2. Not 100% tested.
3. These timings are for Temporary Sector Unprotect operation.
4. Output Driver Disable Time.
Parameter Symbols
Description
Speed Option (Notes 1 and 2)
JEDEC
Standard
-65
-70
-90
-120
-150
Unit
tAVAV
tWC
Write Cycle Time
Min
60
70
90
120
150
ns
tAVWL
tAS
Address Setup Time
Min
00000
ns
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
150
ns
tDVWH
tDS
Data Setup Time
Min
30
30
45
50
50
ns
tWHDX
tDH
Data Hold Time
Min
00000
ns
tOEH
Output
Enable
Hold Time
Read (Note 2)
Min
00000
ns
Toggle and Data Polling
(Note 2)
Min
10
10
10
10
10
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE High to WE Low)
Min
00000
ns
tELWL
tCS
CE Setup Time
Min
00000
ns
tWHEH
tCH
CE Hold Time
Min
00000
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
45
50
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
20
20
20
20
ns
tWHWH1
tWHWH1
Programming Operation
Byte
Typ
77777
µs
Word
Typ
1414141414
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 1)
Typ
1.0
1.0
1.0
1.0
1.0
sec
Max
88888
sec
tVCS
VCC Setup Time (Note 2)
Min
50
50
50
50
50
µs
tVIDR
Rise Time to VID (Notes 2, 3)
Min
500
500
500
500
500
ns
tOESP
OE Setup Time to WE Active
(Notes 2, 3)
Min
44444
µs
tRP
RESET Pulse Width
Min
500
500
500
500
500
ns
tFLQZ
BYTE Switching Low to Output High Z
(Notes 3, 4)
Max
20
20
30
30
30
ns
tBUSY
Program/Erase Valid to RY/BY Delay
(Note 2)
Min
30
30
35
50
55
ns
tRESSP
RESET Setup Time to WE Active
Min
44444
µs



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