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AM29F400AT 数据表(PDF) 24 Page - Advanced Micro Devices

部件名 AM29F400AT
功能描述  4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
PDF  35 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29F400AT 数据表(HTML) 24 Page - Advanced Micro Devices

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24
Am29F400AT/Am29F400AB
PRELIMINARY
AC CHARACTERISTICS
Read-Only Operations Characteristics
Notes:
Parameter
Symbols
Speed Option (Notes 1 and 2)
JEDEC
Standard Description
Test Setup
-65
-70
-90
-120
-150
Unit
tAVAV
tRC
Read Cycle Time (Note 4)
Min
60
70
90
120
150
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
Max
60
70
90
120
150
ns
tELQV
tCE
Chip Enable to Output Delay
OE = VIL Max
60
70
90
120
150
ns
tGLQV
tOE
Output Enable to Output
Delay
Max
30
30
35
50
55
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Notes 3, 4)
Max
20
20
20
30
35
ns
tGHQZ
tDF
Output Enable to Output
High Z (Notes 3, 4)
Max
20
20
20
30
35
ns
tAXQX
tOH
Output Hold Time From
Addresses, CE or OE,
Whichever Occurs First
Min
00000
ns
tReady
RESET Pin Low to Read
Mode (Note 4)
Max
20
20
20
20
20
µs
tELFL
tELFH
CE to BYTE Switching Low
or High
Max
55555
ns
1. Test Conditions (for -65 only)
Output Load: 1 TTL gate and 30 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels:0.0 V to 3.0 V
Timing Measurement Reference Level: 1.5 V input
and output
2. Test Conditions (for -70, -90, -120, -150)
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 20 ns
Input Pulse Levels: 0.45 V to 2.4 V
Timing Measurement Reference Level: 0.8 V and 2.0 V
input and output
3. Output Driver Disable Time
4. Not 100% tested.
2.7 k
Ω
IN3064 or Equivalent
CL
6.2 k
Ω
5.0 V
IN3064
or Equivalent
Device
Under
Test
IN3064 or Equivalent
IN3064 or Equivalent
Notes:
For -65: CL = 30 pF including jig capacitance
For all others: CL = 100 pF including jig capacitance
20380B-14
Figure 7.
Test Conditions



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