STM32F103RG datasheet(59/120 Pages) STMICROELECTRONICS

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STM32F103xF, STM32F103xG

Electrical characteristics

Doc ID 16554 Rev 3

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Low-speed internal (LSI) RC oscillator

Wakeup time from low-power mode

The wakeup times given in Table 27 is measured on a wakeup phase with a 8-MHz HSI RC

oscillator. The clock source used to wake up the device depends from the current operating

mode:

●

Stop or Standby mode: the clock source is the RC oscillator

●

Sleep mode: the clock source is the clock that was set before entering Sleep mode.

All timings are derived from tests performed under ambient temperature and VDD supply

voltage conditions summarized in Table 10.

Table 26.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(2)

Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(3)

LSI oscillator power consumption

0.65

1.2

µA

Table 27.

Low-power mode wakeup timings

Symbol

Parameter

Typ

Unit

tWUSLEEP

(1)

The wakeup times are measured from the wakeup event to the point in which the user application code

reads the first instruction.

Wakeup from Sleep mode

1.8

µs

tWUSTOP

(1)

Wakeup from Stop mode (regulator in run mode)

3.6

µs

Wakeup from Stop mode (regulator in low power mode)

5.4

tWUSTDBY

(1)

Wakeup from Standby mode

µs

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